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High Temperature Annealing of the Interface State Component of Negative-Bias Temperature Instability (NBTI) in MOSFET Devices

Monday, October 28, 2013: 08:30
Union Square 22, Tower 3, 4th Floor (Hilton San Francisco Union Square)
Duc Nguyen , COSMIAC
Kenneth Kambour , SAIC, Albuquerque, NM
Camron Kouhestani , COSMIAC
Harold P. Hjalmarson , Sandia National Laboratories, Albuquerque, NM
Roderick A.B. Devine , Think-Strategically

Abstract:

See more of: Defects, Traps, and Reliability
See more of: E10: Semiconductors, Dielectrics, and Metals for Nanoelectronics 11
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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