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(Invited) Extremely Short Channel Si-MOSFETs Prepared on SOI Substrates Using Anisotropic Wet Etching

Wednesday, October 30, 2013: 10:50
Union Square 22, Tower 3, 4th Floor (Hilton San Francisco Union Square)
Shinji Migita , National Institute of Advanced Industrial Science and Technology, Tsukuba, Japan
Yukinori Morita , National Institute of Advanced Industrial Science and Technology
Meishoku Masahara , National Institute of Advanced Industrial Science and Technology
Hiroyuki Ota , National Institute of Advanced Industrial Science and Technology

Abstract:

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See more of: E10: Semiconductors, Dielectrics, and Metals for Nanoelectronics 11
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