Novel Transistors

Wednesday, October 30, 2013: 10:50-11:50
Union Square 22, Tower 3, 4th Floor (Hilton San Francisco Union Square)
Chairs:
Kaustav Banerjee, PhD and Hemanth Jagannathan
10:50
2181
(Invited) Extremely Short Channel Si-MOSFETs Prepared on SOI Substrates Using Anisotropic Wet Etching
Shinji Migita, National Institute of Advanced Industrial Science and Technology; Yukinori Morita, National Institute of Advanced Industrial Science and Technology; Meishoku Masahara, National Institute of Advanced Industrial Science and Technology; Hiroyuki Ota, National Institute of Advanced Industrial Science and Technology
11:20
2182
(Invited) High-Performance Field-Effect-Transistors on Monolayer-WSe2
Wei Liu, PhD, University of California, Santa Barbara; W. Cao, University of California; Jiahao Kang, BS, University of California, Santa Barbara; Kaustav Banerjee, PhD, University of California, Santa Barbara
11:50
2183
Improvement of Field-Effect Mobility of P3HT Films By Slow Cooling in Annealing Treatment
Shohei Iino, Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University; Daisuke Tadaki, Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University; Teng Ma, Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University; Jinyu Zhang, Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University; Yasuo Kimura, Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University; Michio Niwano, Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University
See more of: E10: Semiconductors, Dielectrics, and Metals for Nanoelectronics 11
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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