2191
Electrical Characterization of Atomic Layer Deposited La2O3 Films on In0.53Ga0.47As Substrates

Wednesday, October 30, 2013: 16:30
Union Square 22, Tower 3, 4th Floor (Hilton San Francisco Union Square)
Hiroshi Oomine , Iwai・Kakushima Laboratory, Tokyo Institute of Technology, Yokohama, Japan
Dariush Hassan Zadeh , Tokyo Institute of Technology
Kuniyuki Kakushima , Tokyo Institute of Technology
Yoshinori Kataoka , Tokyo Institute of Technology
Akira Nishiyama , Tokyo Institute of Technology
Nobuyuki Sugii , Tokyo Institute of Technology
Hitoshi Wakabayashi , Tokyo Institute of Technology
Kazuo Tsutsui , Tokyo Institute of Technology
Kenji Natori , Tokyo Institute of Technology
Hiroshi Iwai , Tokyo Institute of Technology

Abstract:

See more of: InGaAs Channels
See more of: E10: Semiconductors, Dielectrics, and Metals for Nanoelectronics 11
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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