Wednesday, October 30, 2013: 15:40-17:00
Union Square 22, Tower 3, 4th Floor (Hilton San Francisco Union Square)
Chairs:
Alessandro Molle, PhD
and
Samares Kar
15:40
(Invited) Physical and Electrical Properties of Scaled Gate Stacks on Si/Passivated In0.53Ga0.47As
Chiara Marchiori, IBM Research;
M. El Kazzi, IBM Research;
L. Czornomaz, IBM Research;
D. Pierucci, Synchrotron SOLEIL;
M. Silly, Synchrotron SOLEIL;
F. Sirotti, Synchrotron SOLEIL;
S. Abel, IBM Research;
E. Uccelli, IBM Research;
M. Sousa, IBM Research;
J. Fompeyrine, IBM Research
16:10
Electrical Properties and Charge Transport in the Pd/Al2O3/InGaAs MOS Structure
Y. Y. Gomeniuk, NAS of Ukraine;
Y. V. Gomeniuk, NAS of Ukraine;
A. N. Nazarov, NAS of Ukraine;
S. Monaghan, University College Cork;
K. Cherkaoui, University College Cork;
É. O'Connor, University College Cork;
I. Povey, University College Cork;
V. Djara, University College Cork;
P. K. Hurley, University College Cork
16:30
Electrical Characterization of Atomic Layer Deposited La2O3 Films on In0.53Ga0.47As Substrates
Hiroshi Oomine, Tokyo Institute of Technology;
Dariush Hassan Zadeh, Tokyo Institute of Technology;
Kuniyuki Kakushima, Tokyo Institute of Technology;
Yoshinori Kataoka, Tokyo Institute of Technology;
Akira Nishiyama, Tokyo Institute of Technology;
Nobuyuki Sugii, Tokyo Institute of Technology;
Hitoshi Wakabayashi, Tokyo Institute of Technology;
Kazuo Tsutsui, Tokyo Institute of Technology;
Kenji Natori, Tokyo Institute of Technology;
Hiroshi Iwai, Tokyo Institute of Technology
