InGaAs Channels

Wednesday, October 30, 2013: 15:40-17:00
Union Square 22, Tower 3, 4th Floor (Hilton San Francisco Union Square)
Chairs:
Alessandro Molle, PhD and Samares Kar
15:40
(Invited) Physical and Electrical Properties of Scaled Gate Stacks on Si/Passivated In0.53Ga0.47As
Chiara Marchiori, IBM Research; M. El Kazzi, IBM Research; L. Czornomaz, IBM Research; D. Pierucci, Synchrotron SOLEIL; M. Silly, Synchrotron SOLEIL; F. Sirotti, Synchrotron SOLEIL; S. Abel, IBM Research; E. Uccelli, IBM Research; M. Sousa, IBM Research; J. Fompeyrine, IBM Research
16:10
Electrical Properties and Charge Transport in the Pd/Al2O3/InGaAs MOS Structure
Y. Y. Gomeniuk, NAS of Ukraine; Y. V. Gomeniuk, NAS of Ukraine; A. N. Nazarov, NAS of Ukraine; S. Monaghan, University College Cork; K. Cherkaoui, University College Cork; . O'Connor, University College Cork; I. Povey, University College Cork; V. Djara, University College Cork; P. K. Hurley, University College Cork
16:30
Electrical Characterization of Atomic Layer Deposited La2O3 Films on In0.53Ga0.47As Substrates
Hiroshi Oomine, Tokyo Institute of Technology; Dariush Hassan Zadeh, Tokyo Institute of Technology; Kuniyuki Kakushima, Tokyo Institute of Technology; Yoshinori Kataoka, Tokyo Institute of Technology; Akira Nishiyama, Tokyo Institute of Technology; Nobuyuki Sugii, Tokyo Institute of Technology; Hitoshi Wakabayashi, Tokyo Institute of Technology; Kazuo Tsutsui, Tokyo Institute of Technology; Kenji Natori, Tokyo Institute of Technology; Hiroshi Iwai, Tokyo Institute of Technology
16:50
Concluding Remarks