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(Invited) Physical and Electrical Properties of Scaled Gate Stacks on Si/Passivated In0.53Ga0.47As

Wednesday, October 30, 2013: 15:40
Union Square 22, Tower 3, 4th Floor (Hilton San Francisco Union Square)
Chiara Marchiori , IBM Research, Rueschlikon, Switzerland
M. El Kazzi , IBM Research
L. Czornomaz , IBM Research
D. Pierucci , Synchrotron SOLEIL
M. Silly , Synchrotron SOLEIL
F. Sirotti , Synchrotron SOLEIL
S. Abel , IBM Research
E. Uccelli , IBM Research
M. Sousa , IBM Research
J. Fompeyrine , IBM Research

Abstract:

See more of: InGaAs Channels
See more of: E10: Semiconductors, Dielectrics, and Metals for Nanoelectronics 11
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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