2190
Electrical Properties and Charge Transport in the Pd/Al2O3/InGaAs MOS Structure

Wednesday, October 30, 2013: 16:10
Union Square 22, Tower 3, 4th Floor (Hilton San Francisco Union Square)
Y. Y. Gomeniuk , NAS of Ukraine
Y. V. Gomeniuk , NAS of Ukraine
A. N. Nazarov , NAS of Ukraine, Kiev, Ukraine
S. Monaghan , University College Cork
K. Cherkaoui , University College Cork
É. O'Connor , University College Cork
I. Povey , University College Cork
V. Djara , University College Cork
P. K. Hurley , University College Cork

Abstract:

See more of: InGaAs Channels
See more of: E10: Semiconductors, Dielectrics, and Metals for Nanoelectronics 11
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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