2232
(Invited) Development of Metal Source/Drain Ge-CMOS Using TiN/Ge and HfGe/Ge Contacts
(Invited) Development of Metal Source/Drain Ge-CMOS Using TiN/Ge and HfGe/Ge Contacts
Tuesday, October 29, 2013: 14:30
Continental 7, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Abstract:
- E12-2232 (194.4KB) - Abstract Text