Ge-based Technologies

Tuesday, October 29, 2013: 14:00-15:40
Continental 7, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Chairs:
Hiroshi Iwai and Peide D Ye
14:00
2231
(Invited) The Effect of Carbon Doping on Structural and Magnetic Properties of Mn5Ge3/Ge Heterosctructures
Aurelie Spiesser, Dr, Aix-Marseille Université; Minh-Tuan Dau, Aix-Marseille Université; Lisa A Michez, Associate Prof., Aix-Marseille Université; Matthieu Petit, Associate Prof., Aix-Marseille Université; Vinh Le Thanh, Aix-Marseille Université
14:30
2232
(Invited) Development of Metal Source/Drain Ge-CMOS Using TiN/Ge and HfGe/Ge Contacts
Hiroshi Nakashima, Kyushu University; Keisuke Yamamoto, Kyushu University; Dong Wang, Kyushu University
15:00
2233
High-Quality Hybrid-GeSn/Ge Stacked-Structures by Low-Temperature Sn Induced-Melting Growth
Yuki Kinoshita, Student, Kyushu University; Ryo Matsumura, Student, Kyushu University; Taizoh Sadoh, Associate Professor, Kyushu University; Tomoaki Nishimura, Professor, Hosei University; Masanobu Miyao, Professor, Kyushu University
15:20
2234
Characterization of Local Strain Structures in Heteroepitaxial Ge1−xSnx/Ge Microstructures by Using Microdiffraction Method
Shinichi Ike, Bachelor degree, Nagoya University; Yoshihiko Moriyama, Master degree, National Institute of Advanced Industrial Science and Technology; Masashi Kurosawa, PhD, Research Fellow of the Japan Society for the Promotion of Science; Noriyuki Taoka, PhD, Nagoya University; Osamu Nakatsuka, PhD, Nagoya University; Yasuhiko Imai, PhD, Japan Synchrotron Radiation Research Institute/SPring-8; Shigeru Kimura, PhD, Japan Synchrotron Radiation Research Institute/SPring-8; Tsutomu Tezuka, PhD, National Institute of Advanced Industrial Science and Technology; Shigeaki Zaima, PhD, Nagoya University
See more of: E12: ULSI Process Integration 8
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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