Tuesday, October 29, 2013: 16:00-17:30
Continental 7, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Chairs:
Junichi Murota
and
Vinh Le Thanh
16:30
Source and Drain Contact Module for FDSOI MOSFETs : Silicidation and Strain Engineering
Veronique Carron, CEA, LETI;
Fabrice Nemouchi, CEA, LETI;
Jean-Michel Hartmann, CEA, LETI;
David Cooper, CEA, LETI;
Jean-Francois Damlencourt, CEA, LETI;
Sophie Bernasconi, CEA, LETI;
Sylvie Favier, STMicroelectronics;
Yves Morand, STMicroelectronics
16:50
Fin Doping by Hot Implant for 14nm FinFET Technology and Beyond
Bingxi Sun Wood, Ph.D., Applied Materials;
Fareen Adeni Khaja, MS, Applied Materials;
Benjamin P Colombeau, Ph. D., Applied Materials;
Shiyu Sun, Ph. D., Applied Materials;
Andrew Waite, Ph. D., Applied Materials;
Miao Jin, Ph. D., Applied Materials;
Hao Chen, Ph. D., Applied Materials;
Osbert Chan, Applied Materials;
Thirumal Thanigaivelan, MS, Applied Materials;
Nilay Pradhan, Ph. D., Applied Materials;
Hans-Joachim L Gossmann, Ph. D., Applied Materials;
Shashank Sharma, Ph. D., Applied Materials;
Venkataramana R Chavva, Ph. D., Applied Materials;
Man-Ping Cai, Applied Materials;
Motoya Okazaki, Applied Materials;
Samuel Swaroop Munnangi, MS, Applied Materials;
Chi-Nung Ni, Ph. D., Applied Materials;
Wesley Suen, Applied Materials;
Chorng-Ping Chang, Ph. D., Applied Materials;
Abhilash Mayur, Ph. D., Applied Materials;
Naushad Variam, Ph. D., Applied Materials;
Adam D Brand, MS, Applied Materials
