GaN-based High Electron Mobility Transistors
Tuesday, May 13, 2014: 13:30-17:25
Manatee, Ground Level (Hilton Orlando Bonnet Creek)
Chairs:
Krishna Shenai
and
Jihyun Kim
14:00
(Invited) Effect of Annealing on Electronic Carrier Transport Properties of Gamma-Irradiated AlGaN/GaN High Electron Mobility Transistors
A. Yadav, C. Schwarz, M. Shatkhin, L. Wang, E. Flitsiyan, L. Chernyak (University of Central Florida), L. Liu, Y. H. Hwang, F. Ren, S. J. Pearton (University of Florida), and I. Lubomirsky (Weizmann Institute of Science)
14:30
Effect of Proton Irradiation on DC Performance and Reliability of Circular-Shaped AlGaN/GaN High Electron Mobility Transistors
Y. Y. Xi, Y. H. Hwang, Y. L. Hsieh, S. Li, F. Ren, S. J. Pearton, E. Patrick, M. E. Law (University of Florida), G. Yang, H. Y. Kim, J. Kim (Korea University), A. G. Baca, A. A. Allerman, and C. Sanchez (Sandia National Laboratories)
14:50
Enhanced Electrical and Nuclear Radiation Detection Performance in BiI3 Wide Bandgap Semiconductor Detectors
H. Han, M. Hong (Department of Materials Science & Engineering, University of Florida), S. S. Gokhale (Department of Materials Science & Engineering, Nuclear Engineering Program, University of Florida), S. B. Sinnott (Department of Materials Science & Engineering, University of Florida), J. E. Baciak (Department of Materials Science & Engineering, Nuclear Engineering Program, University of Florida), and J. C. Nino (Department of Materials Science & Engineering, University of Florida)
16:25
Effect of Gamma Irradiation on DC Performance of Circular-Shaped AlGaN/GaN High Electron Mobility Transistors
Y. H. Hwang, Y. L. Hsieh, L. Lei, S. Li, F. Ren, S. J. Pearton (University of Florida), A. Yadav, C. Schwarz, M. Shatkhin, L. Wang, E. Flitsiyan, L. Chernyak (University of Central Florida), A. G. Baca, A. Allerman, C. A. Sanchez (Sandia National Laboratories), and I. I. Kravchenko (Oak Ridge National Laboratory)
