Oxide TFT Stability

Tuesday, 7 October 2014: 15:30-17:20
Expo Center, 1st Floor, Universal 4 (Moon Palace Resort)
Guglielmo Fortunato
(Invited) Analysis of Thermal Degradation in Oxide Thin Film Transistors
Y. Uraoka, S. Urakawa, and Y. Ishikawa (Nara Institute of Science and Technology)
Drain Bias Effect on the Instability of Amorphous InGaZnO Thin-Film Transistors under Negative Gate Bias and Illumination Stress
D. Wang, M. P. Hung, J. Jiang, T. Toda, and M. Furuta (Kochi University of Technology)
Interpretation of Defect States in Sputtered IGZO Devices Using I-V and C-V Analysis
T. Mudgal, N. Walsh, N. Edwards (Rochester Institute of Technology), R. G. Manley (Corning Incorporated), and K. D. Hirschman (Rochester Institute of Technology)
Improvement of Electrical Properties and Bias Stability of InGaZnO Thin-Film Transistors by Fluorinated Silicon Nitride Passivation
J. Jiang, T. Tatsuya, G. Tatsuoka, D. Wang, and M. Furuta (Kochi University of Technology)