Oxide TFT Stability

Tuesday, 7 October 2014: 15:30-17:20
Expo Center, 1st Floor, Universal 4 (Moon Palace Resort)
Chair:
Guglielmo Fortunato
15:30
1921
(Invited) Analysis of Thermal Degradation in Oxide Thin Film Transistors
Y. Uraoka, S. Urakawa, and Y. Ishikawa (Nara Institute of Science and Technology)
16:00
1922
Effects of the Bombardment of Negative Oxygen Ions on Gate Bias Stability of InGaZnO Thin Film Transistors
D. Kim, S. Yoon, and M. Hong (Korea University)
16:20
1923
Drain Bias Effect on the Instability of Amorphous InGaZnO Thin-Film Transistors under Negative Gate Bias and Illumination Stress
D. Wang, M. P. Hung, J. Jiang, T. Toda, and M. Furuta (Kochi University of Technology)
16:40
1924
Interpretation of Defect States in Sputtered IGZO Devices Using I-V and C-V Analysis
T. Mudgal, N. Walsh, N. Edwards (Rochester Institute of Technology), R. G. Manley (Corning Incorporated), and K. D. Hirschman (Rochester Institute of Technology)
17:00
1925
Improvement of Electrical Properties and Bias Stability of InGaZnO Thin-Film Transistors by Fluorinated Silicon Nitride Passivation
J. Jiang, T. Tatsuya, G. Tatsuoka, D. Wang, and M. Furuta (Kochi University of Technology)
See more of: Q10: Thin Film Transistors 12 (TFT 12)
See more of: Electronic and Photonic Devices and Systems
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