(Invited) Dopant Activation and Deactivation in InGaAs during Sub-Millisecond Thermal Annealing

Dopant activation of In_0.53Ga_0.47As was determined following laser spike annealing (LSA) at temperatures up to 900 ^oC with dwells from 250 μs to 2000 μs. Temperatures of the InGaAs under LSA were measured using Pt thermistors and calibrated to the known decomposition temperature of a simple polymer. Using spatially resolved probes, temperature dependent activation levels were determined by scanning across a single laser stripe. Raman analysis of the LO phonon peak and the LO phonon-plasmon coupling mode (LOPCM) peak were used to monitor crystal quality and carrier concentrations following anneals of Si⁺ implanted InGaAs. Compared to furnace annealing, LSA was found to increase active carrier concentration and extend the temperature limit before damage. CAPRES 4-point measurements were similarly used to determine carrier activation as a function of annealing temperature. For a 10¹⁴ cm^-2 Si implant dose at 20keV, a minimum sheet resistance of 135 Ω/sq was obtained for a 1000 μs dwell at 845^oC, with a peak carrier concentration of 7.7x10¹⁸ cm^-3.