(Invited) Dopant Activation and Deactivation in InGaAs during Sub-Millisecond Thermal Annealing

Tuesday, 26 May 2015: 10:00
Conference Room 4M (Hilton Chicago)
V. Sorg, S. N. Zhang, M. Hill, P. Clancy, and M. O. Thompson (Cornell University)
Dopant activation of In0.53Ga0.47As was determined following laser spike annealing (LSA) at temperatures up to 900 oC with dwells from 250 μs to 2000 μs. Temperatures of the InGaAs under LSA were measured using Pt thermistors and calibrated to the known decomposition temperature of a simple polymer. Using spatially resolved probes, temperature dependent activation levels were determined by scanning across a single laser stripe. Raman analysis of the LO phonon peak and the LO phonon-plasmon coupling mode (LOPCM) peak were used to monitor crystal quality and carrier concentrations following anneals of Si+ implanted InGaAs. Compared to furnace annealing, LSA was found to increase active carrier concentration and extend the temperature limit before damage. CAPRES 4-point measurements were similarly used to determine carrier activation as a function of annealing temperature. For a 1014 cm-2 Si implant dose at 20keV, a minimum sheet resistance of 135 Ω/sq was obtained for a 1000 μs dwell at 845oC, with a peak carrier concentration of 7.7x1018 cm-3.