Beyond CMOS Devices

Monday, 25 May 2015: 14:00-16:00
Conference Room 4M (Hilton Chicago)
Chair:
Kuniyuki Kakushima
14:00
1366
(Invited) Si Nanowire Tunnel FETs for Energy Efficient Nanoelectronics
Q. T. Zhao, S. Richter, L. Knoll, G. V. Luong, S. Blaeser, C. Schulte-Braucks, A. Schäfer, S. Trellenkamp, D. Buca (Forschungszentrum Juelich), and S. Mantl (Forschungszentrum Jülich GmbH)
14:40
1367
Oxide-Based Synaptic Transistors for Neuromorphic Systems
Q. Wan (Nanjing University)
15:00
1368
Atomic Resolution Study of VO2 Metal-Insulator Transition As Field-Effect Transistors
H. Asayesh-Ardakani, A. Nie (Michigan Technological University), P. Marley (University at Buffalo, State University of New York), Y. Zhu (King Abdullah University of Science & Technology), G. Sambandamurthy, S. Banerjee (University at Buffalo, State University of New York), R. F. Klie (University Of Illinois At Chicago), G. Odegard, and R. Shahbzian-Yassar (Michigan Technological University)
15:20
1369
The Impact of the Ge Concentration in the Source for Vertical Tunnel-FETs
J. A. Martino, P. G. D. Agopian, F. S. Neves (University of Sao Paulo), A. Vandooren, R. Rooyackers (Imec), E. Simoen (imec), A. Thean (Imec), and C. Claeys (KU Leuven, Imec)
See more of: H03: Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5
See more of: Electronic and Photonic Devices and Systems
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