Beyond CMOS Devices

Monday, 25 May 2015: 14:00-16:00
Conference Room 4M (Hilton Chicago)
Kuniyuki Kakushima
(Invited) Si Nanowire Tunnel FETs for Energy Efficient Nanoelectronics
Q. T. Zhao, S. Richter, L. Knoll, G. V. Luong, S. Blaeser, C. Schulte-Braucks, A. Schäfer, S. Trellenkamp, D. Buca (Forschungszentrum Juelich), and S. Mantl (Forschungszentrum Jülich GmbH)
Atomic Resolution Study of VO2 Metal-Insulator Transition As Field-Effect Transistors
H. Asayesh-Ardakani, A. Nie (Michigan Technological University), P. Marley (University at Buffalo, State University of New York), Y. Zhu (King Abdullah University of Science & Technology), G. Sambandamurthy, S. Banerjee (University at Buffalo, State University of New York), R. F. Klie (University Of Illinois At Chicago), G. Odegard, and R. Shahbzian-Yassar (Michigan Technological University)
The Impact of the Ge Concentration in the Source for Vertical Tunnel-FETs
J. A. Martino, P. G. D. Agopian, F. S. Neves (University of Sao Paulo), A. Vandooren, R. Rooyackers (Imec), E. Simoen (imec), A. Thean (Imec), and C. Claeys (KU Leuven, Imec)