Graphene and Beyond: 2D Materials: Structures II

Tuesday, 26 May 2015: 08:00-14:40
Lake Ontario (Hilton Chicago)
Chairs:
Richard Martel and Vito Di Noto
08:00
853
Graphene Ring Nanoelectrodes (GRiNs): Application As an Electroanalytical Sensor
M. Ferrer-Huerta, C. Boxall, J. W. Dickinson, F. Andrieux (Lancaster University), and N. J. Freeman (NanoFlex Limited)
08:20
854
(Invited) Nanoelectronics Based on Silicene
L. Tao (The University of Texas at Austin), E. Cinquanta, C. Grazianetti (IMM-CNR), A. Molle (MDM Laboratory, IMM-CNR), and D. Akinwande (The University of Texas at Austin)
08:40
855
(Invited) Synthesis, Properties and Applications of Group IV Graphane Analogues
S. Jiang, M. Arguilla, N. Cultrara, and J. E. Goldberger (The Ohio State University)
09:00
856
(Invited) Graphene Plasmons: Properties and Applications
P. Avouris (IBM T. J. Watson Research Center)
09:40
Coffee Break
 
857
(Invited) Promise of 2D Materials Beyond Graphene (Cancelled)
10:20
858
Quantum Mechanical Electrostatics and Transport Simulation and Performance Evaluation of Short Channel Monolayer WSe2 Field Effect Transistor
S. U. Z. Khan and Q. D. M. Khosru (Bangladesh University of Engineering and Technology)
10:40
859
Degradation and Electronic Confinement in Exfoliated Black Phosphorus
R. Martel, E. Gaufrès, A. Favron (Université de Montréal), F. Fossard (CNRS-ONERA), A. L. Phaneuf (Ecole Polytechnique), P. Lévesque (Department of Chemistry, Université de Montréal), A. Loiseau (CNRS-Onera), R. Leonelli (Université de Montréal), and S. Francoeur (Ecole Polytechnique)
11:00
860
(Invited) Understanding Electronic and Optoelectronic Properties of MoS2 and Its Junctions with Graphene
M. S. Strano (Massachusetts Institute of Technology)
 
861
1/F Noise in MoS2 Field Effect Transistors with Channel Length Variation (Cancelled)
11:40
862
MoS2 Devices Using Pencil Circuits
V. Tiruparkadal Parthasarathy and V. Berry (University of Illinois at Chicago)
12:00
863
Group IV Graphane Analogues As Electronic Materials
N. Cultrara and J. E. Goldberger (The Ohio State University)
12:20
Lunch Break
14:00
864
Carrier Doping of Few-Layer MoS2 with Ionic Polymers and MoS2 Quantum Dots with Atmospheric Water
D. Briggs, P. Nguyen, C. Fager, S. Sreenivasan, and V. Berry (University of Illinois at Chicago)
14:20
865
III-V Tri-Gate Quantum-Well Mosfet for 10nm Technology and Beyond
K. Datta, A. Shadman, S. R. Biswas, E. Rahman, and Q. D. M. Khosru (Bangladesh University of Engineering and Technology)
See more of: B06: Graphene and Beyond: 2D Materials
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