(Invited) Intrinsic Unipolar SiOx-Based Resistive Switching Memory: Characterization, Mechanism and Applications

Tuesday, October 13, 2015: 10:30
105-B (Phoenix Convention Center)
Y. F. Chang, B. Fowler (PrivaTran LLC), F. Zhou (The University of Texas at Austin), and J. C. Lee (University of Texas at Austin)
We propose a research topic to comprehensively understand the intrinsic unipolar SiOx-based resistive-switching random-access memory (ReRAM) characteristics and mechanisms that can provide deep insights of device design and performance improvement for next-generation nonvolatile memory applications, as required for low-power portable electronics, highly-integrated of compact memory design, and other applications. Several main research targets will be pursued. Firstly, we will investigate device structures, material compositions and electrical characteristics to realize ReRAM cells with high ON/OFF ratio, low static power consumption, low switching power, and high readout-margin using CMOS compatible SiOx-based materials in both metal-insulator-semiconductor (MIS) and metal-insulator-metal (MIM), and one diode - one resistive switching element (1D-1R) architectures. These ideas will be combined with the use of horizontal and vertical device structure designs (active device size and thickness), composition optimization (SiOx, x < 2), electrical controlling (compliance current limitation, stopped voltage sweeping, and polarity effect) and external factors (series-resistance and ambient effects) for understanding and characterizations of resistive switching mechanism. Secondly, modeling of resistive switching mechanism, including temperature effect, pulse response and carrier transport behaviors will be performed, to develop a compact model in energy diagram, trap-level information, dipole polarization in SiOx resistive switching layer, even for computer-aided design (CAD) in very-large-scale integration (VLSI) design. Finally, for the first time, an intriguing non-Von Neumann computing architecture, named synapse-based neuromorphic system, will be demonstrated in SiOx-based ReRAM, combining with bio-inspiration and biomimetics process illustrations. The novel applications in the physiology and pathology discussions in reactive oxygen species (ROS) production and regulation processes will be clarified. This work will present the comprehensively investigation of SiOx-based resistive switching characteristics, mechanisms, applications for future post-CMOS devices era.