Memory

Tuesday, October 13, 2015: 09:00-12:20
105-B (Phoenix Convention Center)
Chairs:
Kazuhiko Endo and Hongxin Yang
09:00
825
The Effect of CoSi2 Formation Process on the CMOS Transistor Electrical Properties for Sub 100nm Memory Applications
J. H. Park, S. J. Kim, J. H. Lee, C. J. Yoo, H. J. Kang, B. C. Lee (SK Hynix Semiconductor), and J. G. Jeong (SK Hynix Semiconductor)
09:20
826
Electroless Deposition of Ferromagnetic CoxFe1-x alloys Using Metal Ion Reducing Agent
A. Joi, E. Chen (University of California-Berkely), and Y. Dordi (Corporate Technology Development, Lam Research)
09:40
Intermission
10:00
827
(Invited) Variability in FinFET SRAM Cells
K. Endo, S. O'uchi, T. Matsukawa, Y. Liu (National Institute of AIST), and M. Masahara (National Institute of AIST)
10:30
828
(Invited) Intrinsic Unipolar SiOx-Based Resistive Switching Memory: Characterization, Mechanism and Applications
Y. F. Chang, B. Fowler (PrivaTran LLC), F. Zhou (The University of Texas at Austin), and J. C. Lee (University of Texas at Austin)
11:00
829
(Invited) Novel Selector and 3D RRAM Development for High Density Non-Volatile Memory
H. Yang, C. C. Tan, W. He, M. Li, Y. Jiang (Data Storage Institute, Singapore), and Y. Yang (Data Storage Institute, Singapore)
11:30
830
(Invited) White-Light-Induced Annihilation of Percolation Paths in SiO2 and High-k Dielectrics - Prospect for Gate Oxide Reliability Rejuvenation and Optical-Enabled Functions in CMOS Integrated Circuits
D. S. Ang, T. Kawashima (Nanyang Technological University, Toshiba Corporation Japan), Y. Zhou, K. S. Yew, M. K. Bera (Nanyang Technological University), and H. Zhang (Nanyang Technological University)
12:00
831
Three-Dimensional Fully-Coupled Electrical and Thermal Transport Model of Dynamic Switching in Oxide Memristors
X. Gao, D. Mamaluy, P. R. Mickel (Sandia National Laboratories), and M. Marinella (Sandia National Laboratories)
See more of: D04: Semiconductors, Dielectrics, and Metals for Nanoelectronics 13
See more of: Dielectric Science and Materials
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