(Invited) Atomic Layer Deposition of Metals and Oxides on Graphene for Future Nanoelectronics

Wednesday, October 14, 2015: 09:00
Phoenix East (Hyatt Regency)
A. A. Bol, R. H. J. Vervuurt, N. F. W. Thissen, A. Sharma (Eindhoven University of Technology), and W. M. M. Kessels (Eindhoven University of Technology)
Graphene is a two-dimensional material with very high intrinsic charge carrier mobilities. Graphene is therefore a promising candidate for post-silicon electronics. Two of the critical issues in unlocking the potential of graphene are the ability to deposit ultra-thin high-K dielectrics on grapene and fabricate low resistance contacts to graphene. Technologically, it is desirable to use atomic layer deposition (ALD) for this purpose. Since ALD is based on self-limiting surface reactions, ultrathin films can be deposited that make an intimate contact with the underlaying surface. The inert nature of graphene however has made ALD on graphene very challenging. Therefore, seed layers or functional groups need to be placed on the graphene to initiate ALD growth. The seed layers or functional groups can however have a detrimental effect on the properties of graphene. This presentation will give an overview of techniques that are being used in literature and in our own lab to stimulate ALD on graphene.