(Invited) Reaction Mechanisms on Binary III-V Semiconductor Surfaces during Etching, Passivation, and Deposition

Reactions on III-V semiconductors are complicated by virtue of having atoms from different chemical groups on the surface. Which atom dominates the chemistry, group III or group V? Does it depend on the type of chemistry—etching, passivation, deposition? Does the exposed crystal plane play a role? This talk will review recent data that both validates and challenges old assumptions about how these surfaces react with oxidizing liquid and neutral gas phase chemistries.