Interfaces, Traps, and Reliability

Tuesday, October 13, 2015: 13:40-15:40
105-B (Phoenix Convention Center)
Chairs:
Eddy Simoen and K. Kita
13:40
832
Proximity Gettering Design Via Nano-Cavities Induced By Hydrogen-Ion Implantation for Si CMOS Image-Sensor
I. H. Kim, J. S. Park, G. S. Lee (Hanyang University), and J. G. Park (Hanyang University)
14:00
833
(Invited) The Influence of Defects on the Electronic Properties of Hafnia
D. R. Islamov, V. A. Gritsenko (Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk State University), and T. V. Perevalov (Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk State University)
14:30
834
(Invited) The Assessment of Border Traps in High-Mobility Channel Materials
E. Simoen (imec), A. Alian, H. Arimura (Imec), D. Lin, H. Mertens (imec), J. Mitard (Imec), S. Sioncke (Imec), W. Fang (Imecas), J. Luo (Imecas), C. Zhao (Institute of Microelectronics, CAS), A. Mocuta, N. Collaert, A. Thean (Imec), and C. Claeys (Imec)
15:00
835
Quantitative Characterization of Near-Interface Oxide Traps in 4H-SiC MOS Capacitors by Transient Capacitance Measurements
Y. Fujino (The University of Tokyo) and K. Kita (The University of Tokyo)
15:20
836
Effects of Deuterium Incorporation on Performance and Reliability of Gate-Last High-k/Metal Gate CMOS Devices
G. R. Kim (Sungkyunkwan University), H. C. Sagong, W. K. Lee, J. K. Park, S. W. Pae (Samsung Electronics), J. W. Park (Samsung Electronics), and B. D. Choi (Sungkyunkwan University)
See more of: D04: Semiconductors, Dielectrics, and Metals for Nanoelectronics 13
See more of: Dielectric Science and Materials
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