Ge, SiGe, GeSn Channel

Wednesday, October 14, 2015: 08:40-12:00
105-B (Phoenix Convention Center)
Chairs:
Akira Toriumi and Takayoshi Shimura
08:40
842
CMOS Compatible Growth of High Quality Ge, SiGe and SiGeSn for Photonic Device Applications
M. A. Alher (University of Arkansas, University of Kerbala), A. Mosleh, L. Cousar (Arktonics, LLC), W. Dou, P. Grant, S. A. Ghetmiri, S. Al-Kabi, W. Du (University of Arkansas), M. Benamara (University of Arkansas), B. Li (Arktonics, LLC), M. Mortazavi (University of Arkansas at Pine Bluff), S. Q. Yu (University of Arkansas), and H. A. Naseem (University of Arkansas)
09:00
843
Enhancement of Material Quality of (Si)GeSn Films Grown by SnCl4 Precursor
A. Mosleh (University of Arkansas), M. A. Alher (University of Kerbala), L. Cousar (Arktonics, LLC), H. Abusafe (Arktonics, LLC), W. Dou, P. Grant, S. Al-Kabi, S. A. Ghetmiri, B. Alharthi, H. Tran, W. Du (University of Arkansas), M. Benamara (University of Arkansas), B. Li (Arktonics, LLC), M. Mortazavi (University of Arkansas at Pine Bluf), S. Q. Yu (University of Arkansas), and H. A. Naseem (University of Arkansas)
09:20
844
Influence of Hydrogen Post-Implantation on Threading Dislocation Density in Strain-Relaxed Sige Layer
J. S. Park, I. H. Kim, G. S. Lee, T. H. Shim (Hanyang University), and J. G. Park (Hanyang University)
09:40
Intermission
10:00
845
(Invited) Effects of Ge Substrate Annealing in H2 on Electron Mobility as well as on Junction Leakage in n-channel Ge MOSFETs
A. Toriumi, C. Lee (The University of Tokyo), and T. Nishimura (The University of Tokyo)
10:30
846
Non-Thermal Equilibrium Formation of Ge1-xSnx (0≤x≤0.2) Crystals on Insulator by Pulsed Laser Annealing
K. Moto, R. Matsumura, H. Chikita (Department of Electronics, Kyushu University), T. Sadoh, H. Ikenoue (Department of Gigaphoton Next GLP, Kyushu University), and M. Miyao (Department of Electronics, Kyushu University)
10:50
847
Ultra-Low Temperature (~180°C) Solid-Phase Crystallization of GeSn on Insulator Triggered by Laser-Anneal Seeding
R. Matsumura, K. Moto, Y. Kai (Department of Electronics, Kyushu University), T. Sadoh, H. Ikenoue (Department of Gigaphoton Next GLP, Kyushu University), and M. Miyao (Department of Electronics, Kyushu University)
11:10
848
(Invited) Fabrication of High-Quality Ge-on-Insulator Structures by Lateral Liquid Phase Epitaxy
T. Shimura, Y. Suzuki, M. Matsue, K. Kajimura, K. Tominaga, T. Amamoto, T. Hosoi (Osaka University), and H. Watanabe (Osaka University)
11:40
849
Electrical Characterization of Dry and Wet Processed Interface Layer in Ge/High-K Devices
Y. M. Ding, D. Misra (New Jersey Institute of Technology), M. Bhuyian (New Jersey Institute of Technology), K. Tapily, R. D. Clark, S. Consiglio, C. S. Wajda (TEL Technology Center, America, LLC), and G. J. Leusink (TEL Technology Center, America, LLC)
See more of: D04: Semiconductors, Dielectrics, and Metals for Nanoelectronics 13
See more of: Dielectric Science and Materials
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