Characterisation

Tuesday, October 13, 2015: 16:00-17:40
105-B (Phoenix Convention Center)
Chairs:
K. Kita and Samares Kar
16:00
837
Negative Gate Transconductance in MIS Tunnel Diode Induced by Peripheral Minority Carrier Control Mechanism
C. S. Liao (National Taiwan University) and J. G. Hwu (National Taiwan University)
16:20
838
Nanoscale Potential Fluctuation in Non-Stoichiometric Hafnium Suboxides
O. M. Orlov (JSC Molecular Electronics Research Institute), G. J. Krasnikov (JSC Molecular Electronics Research Institute), V. A. Gritsenko (Novosibirsk State University, Rzhanov Institute of Semiconductor Physics SB RAS), V. N. Kruchinin, T. V. Perevalov, V. S. Aliev (Rzhanov Institute of Semiconductor Physics SB RAS), D. R. Islamov (Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk State University), and I. P. Prosvirin (Boreskov Institute of Catalysis SB RAS)
16:40
839
Tunneling Current Induced Frequency Dispersion in the C-V Behavior of Ultra-Thin Oxide MOS Capacitors
C. F. Yang (National Taiwan University) and J. G. Hwu (National Taiwan University)
17:00
840
Physically Based Analytical Modeling of 2D Electrostatic Potential for Symmetric and Asymmetric Double Gate Junctionless Field Effect Transistors in Subthreshold Region
I. Ahmed (Bangladesh University of Engineering and Technology) and Q. D. M. Khosru (Bangladesh University of Engineering and Technology)
17:20
841
Non-Uniform Hole Current Induced Negative Capacitance Phenomenon Examined by Photo-Illumination in MOS(n)
H. H. Lin, Y. K. Lin (National Taiwan University), and J. G. Hwu (National Taiwan University)
See more of: D04: Semiconductors, Dielectrics, and Metals for Nanoelectronics 13
See more of: Dielectric Science and Materials
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