Emerging Memories

Wednesday, October 14, 2015: 14:00-16:00
Curtis B (Hyatt Regency)
Chairs:
Kiyoteru Kobayashi and Zia Karim
14:00
769
(Keynote) Nanoscale Memories: What Does Physics Have to Say?
V. V. Zhirnov (Semiconductor Research Corporation), R. Meade, S. C. Pandey (Micron Technology), and G. Sandhu (Micron Technology)
14:40
770
(Invited) Integration Challenges of Ferroelectric Hafnium Oxide Based Embedded Memory
J. Müller, P. Polakowski, J. Paul, S. Riedel, R. Hoffmann (Fraunhofer IPMS-CNT), M. Drescher (Fraunhofer IPMS-CNT), S. Slesazeck (NaMLab gGmbH), S. Müller, H. Mulaosmanovic (NaMLab), U. Schröder (NaMLab gGmbH), T. Mikolajick (NaMLab gGmbH), S. Flachowsky, E. Erben, E. Smith, R. Binder, D. Triyoso, J. Metzger (GLOBALFOUNDRIES), and S. Kolodinski (GLOBALFOUNDRIES)
15:10
771
(Invited) Large Crossbar Arrays for Storage Class Memory and Non-Von Neumann Computing
K. Virwani, G. W. Burr, R. M. Shelby (IBM Research - Almaden), and P. Narayanan (IBM Research - Almaden)
15:40
772
Lead Free Metal-Ferroelectric-Insulator-Semiconductor Devices for Non-Volatile Memory Appliactions
R. Medwal (University of Puerto Rico), S. Gupta (Department of Physics, University of Puerto Rico), S. P. Pavunny (Dept. of Physics, University of Puerto Rico), R. K. Katiyar (Dept. of Physics, University of Puerto Rico), R. Thomas (Centre Énergie, Matériaux et Télécommunications), and R. S. Katiyar (University of Puerto Rico, University of Puerto Rico-Rio Piedras)
See more of: D02: Nonvolatile Memories
See more of: Dielectric Science and Materials
<< Previous Session | Next Session >>