TSV Fabrication - Barrier Layer, Seed Layer

Tuesday, October 13, 2015: 15:20-16:20
Borein A (Hyatt Regency)
Chairs:
Yutaka Kaneko and Wei-Ping Dow
15:20
880
Effect of Plating Additives on Microstructure and Properties of Electrodeposited Ni-Fe Alloy
M. C. Hung, P. F. Chan (National Chung Hsing University), W. P. Dow (National Chung Hsing University), H. Y. Lee, Y. S. Lin (Advanced Semiconductor Engineering Group), and P. F. Yang (Advanced Semiconductor Engineering Group)
15:40
881
Highly Adhesive Displacement Plated Cu Seed on Cowb Barrier for All-Wet TSV Fill Process
K. Ohta (Kansai University.), F. Inoue (Tohoku University/IMEC), T. Shimizu (Kansai University), and S. Shingubara (Kansai University)
16:00
882
Thermal Decomposition of Tungsten Nitrido Precursors for Low Temperature MOCVD of WNxCy
S. Y. Kim, A. Koley, R. Bonsu, M. Nolan, L. McElwee-White (University of Florida), and T. Anderson (University of Florida)
See more of: D05: Processing Materials of 3D Interconnects, Damascene and Electronics Packaging 7
See more of: Dielectric Science and Materials
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