Memory Technologies

Wednesday, October 14, 2015: 13:30-16:00
103-B (Phoenix Convention Center)
Anthony O'Neill and Hiroshi Iwai
(Invited) Innovative Embedded Non-Volatile Memories: Flexibility and Reliability
G. Navarro, E. Vianello, G. Molas, V. Sousa (CEA, LETI, MINATEC Campus), and L. Perniola (CEA, LETI, MINATEC Campus)
Increase in Oxide Trap Density Due to the Implementation of High-k and Al2O3 Cap Layers in Thick-Oxide Input-Output Transistors for DRAM Applications
E. Simoen (imec), R. Ritzenthaler, M. J. Cho (Imec), T. Schram (Imec), N. Horiguchi (imec), M. Aoulaiche, A. Spessot (Micron Technology Belgium), P. Fazan (Micron Technology Belgium), and C. Claeys (Imec)
Resistive Switching Characteristics of Si-Rich Oxides with Embedding Ti Nanodots
Y. Kato, T. Arai, A. Ohta, K. Makihara (Nagoya University), and S. Miyazaki (Nagoya University)
(Invited) Visualization of Conductive Filament of ReRAM during Resistive Switching by In-Situ TEM
Y. Takahashi, M. Kudo (Kyusyu University), and M. Arita (Hokkaido University)
(Invited) An Investigation of the InGaAs MOS System for Future High Mobility Channel Applications
P. K. Hurley, Y. Gomeniuk, J. Lin, S. Monaghan, I. M. Povey, M. E. Pemble, B. J. Hutchinson (Tyndall National Institute), B. Sheehan (Tyndall National Institute), V. Djara (IBM Zurich Research Laboratory), E. O'Connor (IBM Zurich Research Laboratory), and K. Cherkaoui (Tyndall National Institute, University College Cork)
Concluding Remarks