Power Semiconductor Switch Reliability 1

Tuesday, October 13, 2015: 10:30-12:30
Ellis East (Hyatt Regency)
Chairs:
Kenneth A. Jones and Travis J Anderson
10:30
1119
(Invited) Ultra-Wide-Bandgap Semiconductors for Power Electronics
R. J. Kaplar, A. A. Allerman, A. M. Armstrong, A. G. Baca, A. J. Fischer, J. J. Wierer (Sandia National Laboratories), and J. C. Neely (Sandia National Laboratories)
 
1120
Avalanche Energy of High-Voltage Silicon and SiC Power Diodes (Cancelled)
11:30
1121
(Invited) Threshold Voltage Stability Comparison of Commercial SiC Mosfets and Related Issues
R. Green, A. Lelis (U.S. Army Research Laboratory), and D. Habersat (US Army Research Laboratory)
12:00
1122
(Invited) Baseplate Materials for Securing Reliability of Wide Band Gap Power Semiconductor Module Operating at High Temperatures
H. Takahashi (AIST, FUJI ELECTRIC CO., LTD.), T. Anzai (AIST, Calsonic Kansei Corp.), F. Kato (AIST), S. Sato (AIST, Sanken Electric Co., Ltd.), H. Tanisawa (AIST, Sanken Electric Co., Ltd.), Y. Murakami (AIST, NISSAN MOTOR CO., LTD.), K. Watanabe (AIST), and H. Sato (AIST)
See more of: G05: GaN & SiC Power Technologies 5
See more of: Electronic Materials and Processing
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