Power Switching Devices 2

Wednesday, October 14, 2015: 09:00-10:00
Ellis East (Hyatt Regency)
Chairs:
Balaji Raghothamachar and Ron Green
09:00
1127
(Invited) Vertical GaN p-i-n Diodes Formed by Mg Ion Implantation
T. J. Anderson, J. D. Greenlee (NRC Postdoctoral Fellow Residing at NRL), B. Feigelson, J. K. Hite, K. D. Hobart (Naval Research Laboratory), and F. J. Kub (Naval Research Laboratory)
09:30
1128
(Invited) Ion Implantation into GaN and Implanted GaN Power Transistors
K. Nomoto (University of Notre Dame), K. Takahashi, O. Takuya (Dept. of Electrical Engineering, Hosei University), H. Ogawa (Dept. of Electrical Engineering, Hosei University), T. Nishimura (Research Center of Ion Beam Technology, Hosei University), T. Mishima (Research Center of Ion Beam Technology, Hosei University), H. G. Xing (School of ECE, Cornell University, Cornell University), and T. Nakamura (Dept. of Electrical Engineering, Hosei University)
See more of: G05: GaN & SiC Power Technologies 5
See more of: Electronic Materials and Processing
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