Power Semiconductor Switch Reliability 2

Wednesday, October 14, 2015: 10:30-12:30
Ellis East (Hyatt Regency)
Kenneth A. Jones and Robert J. Kaplar
(Invited) Radiation-Induced Defect Mechanisms in GaN HEMTs
A. D. Koehler (Naval Research Laboratory), T. J. Anderson, P. Specht (University of California, Berkeley), B. D. Weaver, J. D. Greenlee (NRC Postdoctoral Fellow Residing at NRL), M. J. Tadjer, D. I. Shahin (University of Maryland), K. D. Hobart (Naval Research Laboratory), and F. J. Kub (Naval Research Laboratory)
Vertical Buffer Leakage and Temperature Effects on the Breakdown Performance of GaN/AlGaN HEMTs on Si Substrate (Cancelled)
Leakage Current Mechanisms in Reverse Biased High-Voltage 4H-SiC Power Diodes (Cancelled)
(Invited) Reliability and Pulsed I-V Analysis of Vertically-Scaled GaN MIS-Hemts
D. J. Meyer, B. P. Downey, J. A. Roussos, D. S. Katzer (U.S. Naval Research Laboratory), M. G. Ancona (U.S. Naval Research Laboratory), M. Pan (IQE RF LLC), and X. Gao (IQE RF LLC)