Power Semiconductor Switch Reliability 2

Wednesday, October 14, 2015: 10:30-12:30
Ellis East (Hyatt Regency)
Chairs:
Kenneth A. Jones and Robert J. Kaplar
10:30
1129
(Invited) Radiation-Induced Defect Mechanisms in GaN HEMTs
A. D. Koehler (Naval Research Laboratory), T. J. Anderson, P. Specht (University of California, Berkeley), B. D. Weaver, J. D. Greenlee (NRC Postdoctoral Fellow Residing at NRL), M. J. Tadjer, D. I. Shahin (University of Maryland), K. D. Hobart (Naval Research Laboratory), and F. J. Kub (Naval Research Laboratory)
 
1130
Vertical Buffer Leakage and Temperature Effects on the Breakdown Performance of GaN/AlGaN HEMTs on Si Substrate (Cancelled)
 
1131
Leakage Current Mechanisms in Reverse Biased High-Voltage 4H-SiC Power Diodes (Cancelled)
12:00
1132
(Invited) Reliability and Pulsed I-V Analysis of Vertically-Scaled GaN MIS-Hemts
D. J. Meyer, B. P. Downey, J. A. Roussos, D. S. Katzer (U.S. Naval Research Laboratory), M. G. Ancona (U.S. Naval Research Laboratory), M. Pan (IQE RF LLC), and X. Gao (IQE RF LLC)
See more of: G05: GaN & SiC Power Technologies 5
See more of: Electronic Materials and Processing
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