D01 Poster Session

Wednesday, 1 June 2016: 18:00-20:00
Exhibit Hall H (San Diego Convention Center)
Chairs:
Durga Misra , Zhi David Chen and Yaw S. Obeng
1020
Effect of Gate Oxide Thickness on Negative Bias Temperature Instability in p-Mosfet with Sion Gate Dielectrics
H. Kim, Y. Hwang (Samsung Electronics Co., Ltd.), and K. P. Lee (Samsung Electronics Co., Ltd)
1021
Dry and Wet Processed Interface Layer in Ge/High-K Devices Studied by Deep Level Transient Spectroscopy
Y. M. Ding and D. Misra (New Jersey Institute of Technology)
1022
Degradation in Pmosfet during Off-State Stress
S. Park (Sungkyunkwan University, Samsung Electronics), I. Kim (Samsung Electronics Co.ltd), and Y. Roh (Sungkyunkwan University)
1023
Low Thermal Budget Microwave Annealing for Nisige Schottky Junction Device
H. H. Li (National United University), Y. H. Tsai (National Chiao-Tung University), Y. H. Lin (National United University), and C. H. Chien (National Chiao-Tung University)
 
1024
Effect of Cu Drift on Dielectric Breakdown for Porous Low Dielectric Constant Film under Static and Dynamic Stress (Cancelled)
1025
Numerical Investigation on Atomic Migration Effect on Thermal Conductivity of Al/Cu Interface Structures in Electronic Interconnection Packaging
L. Zhang (Jiangsu University) and D. Ge (School of Mechanical Engineering, Jiangsu University)
1026
Electrical Properties and Nanoresistive Switching of Ni-HfO2-Si Capacitors
H. García (UNIVERSIDAD DE VALLADOLID), M. Gonzalez (IMB-CNM), C. Vaca, H. Castán, S. Dueñas (UNIVERSIDAD DE VALLADOLID), F. Campabadal. (IMB-CNM), E. Miranda (UNIVERSITAT AUTONOMA DE BARCELONA), and L. Bailon (UNIVERSIDAD DE VALLADOLID)
 
1027
Effects of Precursor Flow Rates on Characteristics of Low-K SiOC(H) Film Deposited by Plasma-Enhanced Chemical Vapor Deposition (Cancelled)
1028
Performance Enhancement of Metal Floating Gate Memory by Using a Bandgap Engineered High-k Tunneling Barrier
D. Jiang (Chinese Academy of Sciences, Chengdu University of Information Technology), L. Jin (Chinese Academy of Sciences), Z. Xia (Chinese Academy of Science), G. Chen (Chinese Academy of Sciences), X. Zou, Y. Zhang (Institute of Microelectronic,Chinese Academy of Science), Z. Tang, and Z. Huo (Chinese Academy of Sciences)
1029
BaTiO3 Film Grown by Water-Based Process
S. F. H. Alhasan (Electrical and Computer Eng.,UCF, University of Technology , Baghdad), H. Abouelkhair (Department of Physics,UCF), R. E. Peale (Department of Physics, University of Central Florida), and I. O. Oladeji (SISOM Thin Films LLC)
See more of: D01: Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufacturing -and- Solid State Topics General Session
See more of: Dielectric Science and Materials
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