Devices and Dielectrics

Monday, 30 May 2016: 14:00-15:50
Sapphire 410 A (Hilton San Diego Bayfront)
Chairs:
Clement Merckling and Junichi Murota
14:00
992
(Invited) Gate-All-Around Nanowire FETs vs. Triple-Gate FinFETs: On Gate Integrity and Device Characteristics
A. Veloso, M. J. Cho, E. Simoen, G. Hellings, P. Matagne (Imec), N. Collaert, and A. Thean (imec, Belgium)
14:30
993
Lateral Non-Uniformity Reduction by Compensatory Metal Embedded in MOS Structure with Ultra-Thin Anodic Oxide
J. Y. Chen, W. C. Kao, and J. G. Hwu (National Taiwan University)
14:50
Intermission
15:00
994
(Invited) Control of Thermally-Grown SiO2/4H-SiC Mos Interface Properties and Its Impact on Mosfet Performances
K. Kita, H. Hirai, Y. Fujino, and H. Kajifusa (The University of Tokyo)
15:30
995
A Comprehensive Analytical Study of Subthreshold Swing for Cylindrical Gate-All-Around Junctionless Field Effect Transistor
I. Ahmed and Q. D. M. Khosru (Bangladesh University of Engineering and Technology)
See more of: D01: Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufacturing -and- Solid State Topics General Session
See more of: Dielectric Science and Materials
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