The presence of Silicon-Germanium (SiGe) alloys at the Si/SiO₂ interface during an oxidation is known to suppress the injection of silicon self interstitials that normally accompanies silicon oxidation and leads to observed effects such as Oxidation Enhanced Diffusion (OED) and stacking fault growth. To measure interstitial injection, a layer of implantation induced dislocation loops was introduced and the interstitial fluxes measured via quantitative plan-view TEM. Germanium was introduced via a second implant at 3keV over a range of doses between 1.7 x10¹⁴ cm^-2 and 1.4 x10¹⁵ cm^-2. We show that partial suppression can be observed for sub-monolayer quantities of germanium, and that more than three monolayers of SiGe are necessary to suppress interstitial injection below the detection limit during oxidation. This study shows that low energy implantation of germanium can be used to eliminate or modulate injection of interstitials. Additional results suggest the mechanism is related to stopping interstitial formation, not migration.