Metal Oxides 2 and Semiconductor Electrochemistry

Thursday, 1 June 2017: 08:30-12:20
Churchill C2 (Hilton New Orleans Riverside)
Heli Wang and Robert P. Lynch
ZnO Electrodeposition on Boron-Doped Diamond: Effects of Diamond Surface Terminations
N. Simon, A. Vallée (ILV- CNRS - UVSQ), A. M. Gonçalves (Institut Lavoisier de Versailles), P. Gautier (ILV- CNRS - UVSQ), and A. Etcheberry (Institut Lavoisier de Versailles)
Electrodeposition of Germanene from Aqueous Solution, pH 9.0
N. Bui, M. Ledina, J. Jung, T. J. Reber, and J. L. Stickney (University of Georgia)
Silicon Anodization As a New Way to Transfer 3D Nano-Imprinted Pattern into a Substrate
L. Nouri, N. Posseme, S. Landis, F. Milesi, F. Gaillard (CEA, LETI), D. Mariolle (CEA-LETI), and C. Licitra (CEA-Leti)
Formation of Etch Pits on Germanium Surfaces Loaded with Reduced Graphene Oxide in Water
K. Nakade, T. Hirano, S. Li, Y. Saito, D. Mori, M. Morita, K. Kawai, and K. Arima (Osaka University)
Elimination and Quantification of Oxidation Induced Interstitial Injection via Ge Implants
T. P. Martin, K. S. Jones (University of Florida), R. A. Camillo-Castillo (Intel), C. Hatem (Global Foundries), Y. Xin (FLorida State University High Magnetic Field Lab), and R. G. Elliman (The Australian National University)
(Invited) Phase Transition and Related Energy Applications of (Hf,Zr)O2 Films
M. H. Park and C. S. Hwang (Seoul National University)
Simulation of the Interfaces of Anatase TiO2 (001), (100), (101) with KOH Solution By Molecular Dynamics (Cancelled)
Effect of a Thin Film of Polypolyphosphazene on the pH Response of InP
J. C. Meledje (Institut Lavoisier de Versailles (UMR 8180)), A. M. Gonçalves (Institut Lavoisier de Versailles), N. Simon (ILV- CNRS - UVSQ), D. Aureau, M. Frégnaux (Institut Lavoisier de Versailles), L. Ouattara (University of Cocody, Côte d'Ivoire), and A. Etcheberry (Institut Lavoisier de Versailles)