We progressively map, ex situ, the effect of adding few monolayers of Al2O3 on the surface chemistry and electrical characteristics of a single CuO nanowire. The CuO nanowire is contacted electrically via electron beam lithography (Figure 1a), prior to the deposition experiments. Using atomic layer deposition (ALD), Al2O3 is deposited using trimethyl aluminum (TMA) and H2O as reactants. A deposition rate of 1Å/cycle is obtained. The chemical changes on the nanowire surface are studied by X-ray photoelectron spectroscopy (XPS) and electrical properties of the nanowire are recorded after every monolayer deposition.
XPS fine spectra of Cu 2p reveal a clear reduction of Cu2+ to Cu1+ after only a single pulse of TMA. The O 1s fine spectra reveals the formation of Al-O and Cu+1-O bonds and removal of adsorbed O species after 1 cycle of Al2O3 (Figure 1b). The Al 2p fine spectra shows a clear Al-O bond formation after ~ 3 cycles of ALD. Thus, a clear surface reduction of CuO nanowire and subsequent formation of Al2O3 is noted in XPS studies. This change in surface chemistry manifests itself in the electrical characteristics as a detectable photocurrent response under ambient (760 Torr) conditions; where, for a pristine CuO nanowire, no such response is previously observed (Figure 1c). Current-voltage characteristics are mapped as a function of temperature and discussed in light of the changes to surface properties observed via XPS.