III-V Materials and Devices 2

Monday, 29 May 2017: 10:00-12:10
Cambridge (Hilton New Orleans Riverside)
Travis J Anderson and Jennifer K Hite
(Invited) Toward GaN-Based Red LEDs: The Influence of Local and Extended Defect Environments on the Optical and Material Properties of GaN:Eu
B. Mitchell (West Chester University), V. Dierolf (Lehigh University), and Y. Fujiwara (Osaka University)
(Invited) Development of Periodically Oriented Gallium Nitride for Frequency Conversion
J. K. Hite, J. A. Freitas Jr., M. A. Mastro (U.S. Naval Research Laboratory), C. G. Brown (University Research Foundation), J. Leach, K. Udwary (Kyma Technologies, Inc), F. J. Kub (Naval Research Laboratory), S. R. Bowman, and C. R. Eddy Jr. (U.S. Naval Research Laboratory)
Normally-Off AlGaN/GaN Mos-Hemts Using ZrO2 Gate Dielectric with Tuneable Charge
T. J. Anderson, V. D. Wheeler (U.S. Naval Research Laboratory), D. I. Shahin (University of Maryland), M. J. Tadjer (U.S. Naval Research Laboratory), L. E. Luna (US Naval Research Laboratory), A. D. Koehler, K. D. Hobart, F. J. Kub (Naval Research Laboratory), and C. R. Eddy Jr. (U.S. Naval Research Laboratory)
GaN Based Hydrogen Sensor in Humid Ambient
S. Jung (Dankook University), K. H. Baik (Hongik University), and S. Jang (Dankook University)
Recovery of Bias-Stress Ionized Igzo/SiO2 Interface States Via Cryogenic Relaxation (Cancelled)