III-V Materials and Devices 2

Anderson, Travis

Monday, 29 May 2017: 10:00-12:10

Cambridge (Hilton New Orleans Riverside)

Chairs:

Travis J Anderson and Jennifer K Hite

10:00

1283

(Invited) Toward GaN-Based Red LEDs: The Influence of Local and Extended Defect Environments on the Optical and Material Properties of GaN:Eu

B. Mitchell (West Chester University), V. Dierolf (Lehigh University), and Y. Fujiwara (Osaka University)

10:30

1284

(Invited) Development of Periodically Oriented Gallium Nitride for Frequency Conversion

J. K. Hite, J. A. Freitas Jr., M. A. Mastro (U.S. Naval Research Laboratory), C. G. Brown (University Research Foundation), J. Leach, K. Udwary (Kyma Technologies, Inc), F. J. Kub (Naval Research Laboratory), S. R. Bowman, and C. R. Eddy Jr. (U.S. Naval Research Laboratory)

11:00

1285

Normally-Off AlGaN/GaN Mos-Hemts Using ZrO₂ Gate Dielectric with Tuneable Charge

T. J. Anderson, V. D. Wheeler (U.S. Naval Research Laboratory), D. I. Shahin (University of Maryland), M. J. Tadjer (U.S. Naval Research Laboratory), L. E. Luna (US Naval Research Laboratory), A. D. Koehler, K. D. Hobart, F. J. Kub (Naval Research Laboratory), and C. R. Eddy Jr. (U.S. Naval Research Laboratory)

11:20

Break

11:30

1286

GaN Based Hydrogen Sensor in Humid Ambient

S. Jung (Dankook University), K. H. Baik (Hongik University), and S. Jang (Dankook University)

1287

Recovery of Bias-Stress Ionized Igzo/SiO₂ Interface States Via Cryogenic Relaxation (Cancelled)

See more of: H01: Wide Bandgap Semiconductor Materials and Devices 18
See more of: Electronic and Photonic Devices and Systems

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