Device and Characterizations 1

Monday, 29 May 2017: 10:00-12:05
Chequers (Hilton New Orleans Riverside)
Chair:
Yu-Lun Chueh
10:00
1360
(Invited) In-Vacuo Studies of Transition Metal Dichalcogenide Synthesis and Layered Material Integration
K. M. Freedy, P. M. Litwin, and S. J. McDonnell (the University of Virginia)
10:35
1361
Scalable and Self-Aligned Growth of Two-Dimensional Transition Metal Dichalcogenides Lateral Heterojunctions for Optoelectronic Applications
M. Y. Li (Research Center for Applied Sciences, Academia Sinica, King Abdullah University of Science and Technology), J. Pu (Department of Applied Physics, Nagoya University, Japan), J. K. Huang (King Abdullah University of Science and Technology), Y. Miyauchi, K. Matsuda (Institute of Advanced Energy, Kyoto University), T. Takenobu (Department of Applied Physics, Nagoya University, Japan), and L. J. Li (King Abdullah University of Science and Technology)
10:55
1362
(Invited) MoS2 Field-Effect Transistors Gated with a Two-Dimensional Electrolyte
J. Liang, K. Xu, and S. Fullerton (University of Pittsburgh)
11:30
1363
(Invited) Solution Processing and Structural Control of 2D Materials of Bi2Te3, MoS2 and V2O5 and Their Applications
E. Carroll, D. Buckley, D. McNulty (University College Cork), V. Mogili (Brazilian Nanotechnology National Laboratory (LNNano)), S. Moreno (Centro Atómico Bariloche), C. Glynn, G. Collins, J. D. Holmes (University College Cork), K. M. Razeeb (Tyndall National Institute, University College Cork), and C. O'Dwyer (University College Cork)
See more of: H03: Properties and Applications of 2-Dimensional Layered Materials 2
See more of: Electronic and Photonic Devices and Systems
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