SiC Material and Devices 1

Monday, 29 May 2017: 14:00-15:20
Cambridge (Hilton New Orleans Riverside)
Chairs:
Soohwan Jang and Scott Calabrese Barton
14:00
1288
(Invited) Wide Bandgap Analog and Mixed-Signal IC Design for Advanced Power Electronics
H. A. Mantooth (University of Arkansas)
14:30
1289
Effect of Boro-Silicate Glass (BSG) Gate Dielectric with Antimony Surface Doping on Channel Transport of 4H-SiC Mosfets
Y. Zheng, T. Isaacs-smith, A. Ahyi (Auburn University), P. Mooney (Simon Fraser University), and S. Dhar (Auburn University)
14:50
1290
Effect of Reactive Ion Etch on 4H-SiC Mos Capacitor Performances
A. Jayawardena, A. Ahyi, T. Isaacs-smith, and S. Dhar (Auburn University)
15:10
Break
See more of: H01: Wide Bandgap Semiconductor Materials and Devices 18
See more of: Electronic and Photonic Devices and Systems
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