SiC Material and Devices 2

Monday, 29 May 2017: 15:20-16:00
Cambridge (Hilton New Orleans Riverside)
Chairs:
Soohwan Jang and Scott Calabrese Barton
15:20
1291
Angle-Resolved Photoelectron Spectroscopy Studies of Initial Stage of Thermal Oxidation on 4H-SiC (0001) on-Axis and 4° Off-Axis Substrates
H. Arai, R. Toyoda (Tokyo City University), A. Ishohashi, Y. Sano (Osaka University), and H. Nohira (Tokyo City University)
15:40
1292
SiGe Bandgap Tuning for High Speed Eam
L. Mastronardi, M. Banakar, A. Z. Khokhar, T. Domínguez Bucio, C. G. Littlejohns (University of Southampton), N. Bernier (University Grenoble Alpes, CEA, LETI, MINATEC Campus), E. Robin (University Grenoble Alpes, CEA, INAC, Minatec Campus), J. R. Rouviere (CEA, INAC MINATEC Campus), H. Dansas, N. Gambacorti (University Grenoble Alpes, CEA, LETI, MINATEC Campus), G. Z. Mashanovich, and F. Y. Gardes (University of Southampton)
See more of: H01: Wide Bandgap Semiconductor Materials and Devices 18
See more of: Electronic and Photonic Devices and Systems
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