Materials and Devices

Thursday, 1 June 2017: 14:00-15:40
Churchill C2 (Hilton New Orleans Riverside)
Colm O'Dwyer and Heli Wang
Resistive Switching Characteristics of Hydrogen Peroxide Surface Oxidized ZnO-Based Transparent Resistive Memory Devices
F. M. Simanjuntak (National Dong Hwa University), B. Pattanayak (National Chiao Tung University), C. C. Lin (National Dong Hwa University), and T. Y. Tseng (National Chiao Tung University)
Comparative Investigation of Graphene Quantum Dots and Graphitic-phase C3N4 Nanosheets in Terms of Photoluminescence Properties and Biomedical Imaging
J. Dong, Y. Zhao, K. Wang (Taishan Medical University), and L. Dong (Hamline University, Taishan Medical University)
Silicon Nitride Spacer Etching with Nearly Atomic Precision for 2D and 3D Devices 
V. Ah-Leung (CEA-LETI), N. Posseme (CEA, LETI), O. Pollet (CEA-LETI), L. Nouri (CEA, LETI), M. Garcia Barros (ST Microelectronics, CEA-LETI), and S. Barnola (CEA-LETI)
Improvement in Electrical Characteristics of ALD Al2O3 Film by Microwave Excited Ar/O2 Plasma Treatment
M. Saito, T. Suwa, A. Teramoto, Y. Koda, R. Kuroda, Y. Shiba, S. Sugawa (Tohoku University), J. Tsuchimoto, and M. Hayashi (CANON ANELVA CORPORATION)
CMP: Consideration of Stop-on Selectivity in Advanced Node Semiconductor Manufacturing Technology
S. Tsai (GlobalFoundries), H. Amanapu (IBM), R. Xie, J. Zhang (GlobalFoundries), K. Chung (IBM), C. Labelle, H. Huang, J. H. Han (GlobalFoundries), D. R. Koli (GLOBALFOUNDRIES Inc), and C. Surisetty (IBM)