(Keynote) Advances in Ga2O3 Processing and Devices

Monday, 2 October 2017: 13:30
Chesapeake A (Gaylord National Resort and Convention Center)
J. Yang, P. Carey, S. Ahn, F. Ren (University of Florida), S. Jang (Dankook University), J. Kim (Korea University), D. Hays, S. J. Pearton (University of Florida), and A. Kuramata (Tamura Corporation and Novel Crystal Technology)
Ga2O3 is a promising wide bandgap semiconductor for applications including power electronics and photodetectors and is available in large diameter, high quality bulk crystalline form. There have been many recent advances on both the materials and processing/device fronts and in this chapter we discuss some developments in Ohmic contacts, plasma etching, understanding of the role of hydrogen and high breakdown rectifier structures. Ga2O3 appears to have a role in expanding applications for high-speed or high-power semiconductor electronic devices. The high-power/high-voltage market is currently primarily served by Si and SiC devices. Ga2O3 is the leading candidate to address the ultra-high power market (>1kW). We will discuss recent progress in developing Ohmic contacts using interlayers of ITO or AZO, high density plasma etching using ICP discharges and the resultant etch rates, morphologies and near-surface damage, behavior of hydrogen incorporated during ion implantation or plasma exposure, measurement of band offsets with dielectrics and application of these processes to vertical and lateral transistor structures.