Ultra-Wide Bandgap Materials and Devices

Monday, 2 October 2017: 13:30-16:00
Chesapeake A (Gaylord National Resort and Convention Center)
Chairs:
Jennifer K Hite and Marko J. Tadjer
13:30
(Keynote) Advances in Ga2O3 Processing and Devices
J. Yang, P. Carey, S. Ahn, F. Ren (University of Florida), S. Jang (Dankook University), J. Kim (Korea University), D. Hays, S. J. Pearton (University of Florida), and A. Kuramata (Tamura Corporation and Novel Crystal Technology)
14:10
(Invited) AlGaN-Based PN Diodes for Power Electronics
A. A. Allerman, M. H. Crawford, G. W. Pickrell, A. M. Armstrong, R. J. Kaplar, J. R. Dickerson, B. Klein, M. P. King, and M. Van Heukelom (Sandia National Laboratories)
14:40
Break
14:50
(Invited) Low-Resistance Ohmic Contacts to Al0.45Ga0.55n/ Al0.3Ga0.7n HEMTS
B. Klein, A. G. Baca, A. M. Armstrong, A. A. Allerman, E. A. Douglas, C. Sanchez, P. Kotula, M. Miller, and S. Reza (Sandia National Laboratories)
15:20
Mechanical Exfoliation of Large Area (100) β-Ga2O3 Onto Arbitrary Substrates for High Power Devices
M. J. Tadjer, M. A. Mastro (U.S. Naval Research Laboratory), A. Nath (George Mason University), L. E. Luna (US Naval Research Laboratory), T. J. Anderson, K. D. Hobart (Naval Research Laboratory), and A. Kuramata (Tamura Corporation and Novel Crystal Technology)
15:40
Surface Analysis of AlGaN Channel Hemts
E. A. Douglas, M. Brumbach, B. Klein, A. G. Baca, and A. A. Allerman (Sandia National Laboratories)