Ultra-Wide Bandgap Materials and Devices

Monday, 2 October 2017: 13:30-16:00
Chesapeake A (Gaylord National Resort and Convention Center)
Chairs:
Jennifer K. Hite and Marko J. Tadjer
13:30
1230
(Keynote) Advances in Ga2O3 Processing and Devices
J. Yang, P. Carey, S. Ahn, F. Ren (University of Florida), S. Jang (Dankook University), J. Kim (Korea University), D. Hays, S. J. Pearton (University of Florida), and A. Kuramata (Tamura Corporation and Novel Crystal Technology)
14:10
1231
(Invited) AlGaN-Based PN Diodes for Power Electronics
A. A. Allerman, M. H. Crawford, G. W. Pickrell, A. M. Armstrong, R. J. Kaplar, J. R. Dickerson, B. Klein, M. P. King, and M. S. Van Heukelom (Sandia National Laboratories)
14:40
Break
14:50
1232
(Invited) Low-Resistance Ohmic Contacts to Al0.45Ga0.55n/ Al0.3Ga0.7n HEMTS
B. Klein, A. G. Baca, A. M. Armstrong, A. A. Allerman, E. A. Douglas, C. Sanchez, P. G. Kotula, M. Miller, and S. Reza (Sandia National Laboratories)
15:20
1233
Mechanical Exfoliation of Large Area (100) β-Ga2O3 Onto Arbitrary Substrates for High Power Devices
M. J. Tadjer, M. A. Mastro (U.S. Naval Research Laboratory), A. Nath (George Mason University), L. E. Luna (U.S. Naval Research Laboratory), T. J. Anderson, K. D. Hobart (Naval Research Laboratory), and A. Kuramata (Tamura Corporation and Novel Crystal Technology)
15:40
1234
Surface Analysis of AlGaN Channel Hemts
E. A. Douglas, M. Brumbach, B. Klein, A. G. Baca, and A. A. Allerman (Sandia National Laboratories)
See more of: H01: State-of-the-Art Program on Compound Semiconductors 60 (SOTAPOCS 60)
See more of: Electronic and Photonic Devices and Systems
<< Previous Session | Next Session >>