In 2013 Raytheon began to integrate deep submicron (≤0.25 µm gate) 200mm GaN on Si HEMT processes within a commercial CMOS Si Foundry environment. When fully realized, these processes will demonstrate multi GHz GaN on Si MMICs by leveraging a fully subtractively processed transistor coupled with multi level copper based back end of line (Cu BEOL) processes. This work provides a status update on the progress towards that goal.