(Invited) Towards a Si Foundry-Compatible, GaN-on-Si Mmic Process on 200 Mm Si with a Cu Damascene BEOL

Monday, 2 October 2017: 11:10
Chesapeake A (Gaylord National Resort and Convention Center)
J. Laroche, K. Ip, T. Kennedy (Raytheon Integrated Defense Systems), L. Soirez, T. Trimble (Novati Technologies Inc.), and T. Kazior (Raytheon Integrated Defense Systems)
In 2013 Raytheon began to integrate deep submicron (≤0.25 µm gate) 200mm GaN on Si HEMT processes within a commercial CMOS Si Foundry environment. When fully realized, these processes will demonstrate multi GHz GaN on Si MMICs by leveraging a fully subtractively processed transistor coupled with multi level copper based back end of line (Cu BEOL) processes. This work provides a status update on the progress towards that goal.