RF Devices

Monday, 2 October 2017: 09:00-12:00
Chesapeake A (Gaylord National Resort and Convention Center)
Chairs:
Travis J Anderson and David J. Meyer
09:00
Welcoming Remarks
09:50
(Invited) What's Next after GaN?  How about More GaN!
D. J. Meyer, B. P. Downey, M. T. Hardy, D. F. Storm, D. S. Katzer, M. G. Ancona, N. Nepal, and J. A. Roussos (U.S. Naval Research Laboratory)
10:20
Break
11:10
(Invited) Towards a Si Foundry-Compatible, GaN-on-Si Mmic Process on 200 Mm Si with a Cu Damascene BEOL
J. Laroche, K. Ip, T. Kennedy (Raytheon Integrated Defense Systems), L. Soirez, T. Trimble (Novati Technologies Inc.), and T. Kazior (Raytheon Integrated Defense Systems)
11:40
Mercury Selective GaN HEMT Sensor for Dynamic Water Quality Monitoring
R. Sukesan (National Tsing Hua University), Y. T. Chen (Institute of NanoEngineering and MicroSystems), and Y. L. Wang (National Tsing Hua University)