RF Devices

Monday, 2 October 2017: 09:00-12:00
Chesapeake A (Gaylord National Resort and Convention Center)
Chairs:
Travis J. Anderson and David J. Meyer
09:00
Welcoming Remarks
09:10
1225
(Keynote) Perspective on the Development of RF Compound Semiconductors from GaAs to GaN and Beyond
P. Saunier (Retired)
09:50
1226
(Invited) What's Next after GaN?  How about More GaN!
D. J. Meyer, B. P. Downey, M. T. Hardy, D. F. Storm, D. S. Katzer, M. G. Ancona, N. Nepal, and J. A. Roussos (U.S. Naval Research Laboratory)
10:20
Break
10:40
1227
(Invited) Important Recent Advancement of GaN Technology and MMICs for W-Band Applications
S. Chen, L. Witkowski, and X. Gu (Qorvo)
11:10
1228
(Invited) Towards a Si Foundry-Compatible, GaN-on-Si Mmic Process on 200 Mm Si with a Cu Damascene BEOL
J. Laroche, K. Ip, T. Kennedy (Raytheon Integrated Defense Systems), L. Soirez, T. Trimble (Novati Technologies Inc.), and T. Kazior (Raytheon Integrated Defense Systems)
11:40
1229
Mercury Selective GaN HEMT Sensor for Dynamic Water Quality Monitoring
R. Sukesan (National Tsing Hua University), Y. T. Chen (Institute of NanoEngineering and MicroSystems), and Y. L. Wang (National Tsing Hua University)
See more of: H01: State-of-the-Art Program on Compound Semiconductors 60 (SOTAPOCS 60)
See more of: Electronic and Photonic Devices and Systems
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