(Invited) Vertical GaN Devices Enabled By Selective Area P-Type Doping

Tuesday, 3 October 2017: 16:10
Chesapeake A (Gaylord National Resort and Convention Center)
A. D. Koehler, T. J. Anderson (Naval Research Laboratory), A. Nath (George Mason University), A. G. Jacobs, M. J. Tadjer, B. Feigelson (U.S. Naval Research Laboratory), M. S. Goorsky (University of California Los Angeles), K. D. Hobart, and F. J. Kub (Naval Research Laboratory)
A key element for enabling high performance vertical GaN power electronic devices is the capability to realize selective area p-type doping. The ability to arbitrarily define p-type regions through ion implantation eliminates the need for epitaxial regrowth on etched surfaces, which is currently a well-known technological roadblock. However, activation of implanted Mg is also a challenge, since activation of the Mg acceptors requires annealing at temperatures above the thermodynamic stability limits of GaN in atmosphere. Implementing the symmetric multi cycle rapid thermal annealing (SMTRA) technique has been shown to activate up to ~10% of the implanted Mg dopant atoms. This technique includes a temporary thermally stable capping layer, annealing in a nitrogen overpressure, and performing a well-optimized annealing temperature profile including multiple spike anneals. Vertical GaN junction barrier Schottky (JBS) diodes and Schottky barrier diodes (SBDs) with implanted junction termination extension (JTE) are demonstrated using the SMRTA process, as are process module development toward trench MOSFET devices.