Power Electronics II

Tuesday, 3 October 2017: 13:30-16:40
Chesapeake A (Gaylord National Resort and Convention Center)
Chairs:
Rachael L. Myers-Ward and Andrew A. Allerman
13:30
1240
(Invited) Thermo-Mechanical Reliability Challenges in the Heterogeneous Integration and Packaging of Wide Bandgap Semiconductors
T. Jiang (University of Central Florida)
14:00
1241
(Invited) Controlling Materials Defects for SiC Power Devices
R. E. Stahlbush (U. S. Naval Research Laboratory) and N. A. Mahadik (U.S. Naval Research Laboratory)
14:30
1242
Fabrication of Deep 4H-SiC Microstructures Via Inductively Coupled SF6/O2 Plasma
L. E. Luna, M. J. Tadjer (U.S. Naval Research Laboratory), R. L. Myers-Ward (U.S. Naval Research Laboratory, Washington DC), T. J. Anderson, K. D. Hobart, and F. J. Kub (Naval Research Laboratory)
14:50
Break
15:10
1243
(Invited) A Discussion on the Latest Performance of Gan–Based Vertical Devices and the Paths Forward
S. Chowdhury (University of California, Davis)
15:40
1244
(Invited) Development of III-Nitride Bipolar Transistor Switches and Rectifiers
S. C. Shen, R. D. Dupuis, T. Detchprohm (Georgia Institute of Technology), J. H. Ryou (University of Houston), J. B. Zivasatienraj, M. H. Ji, T. T. Kao, Y. C. Lee, Z. Lochner, and J. Kim (Georgia Institute of Technology)
16:10
1245
(Invited) Vertical GaN Devices Enabled By Selective Area P-Type Doping
A. D. Koehler, T. J. Anderson (Naval Research Laboratory), A. Nath (George Mason University), A. G. Jacobs, M. J. Tadjer, B. Feigelson (U.S. Naval Research Laboratory), M. S. Goorsky (University of California Los Angeles), K. D. Hobart, and F. J. Kub (Naval Research Laboratory)
See more of: H01: State-of-the-Art Program on Compound Semiconductors 60 (SOTAPOCS 60)
See more of: Electronic and Photonic Devices and Systems
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