Power Electronics II

Tuesday, 3 October 2017: 13:30-16:40
Chesapeake A (Gaylord National Resort and Convention Center)
Chairs:
Rachael L. Myers-Ward and Andrew A. Allerman
14:00
(Invited) Controlling Materials Defects for SiC Power Devices
R. E. Stahlbush (U. S. Naval Research Laboratory) and N. A. Mahadik (U.S. Naval Research Laboratory)
14:30
Fabrication of Deep 4H-SiC Microstructures Via Inductively Coupled SF6/O2 Plasma
L. E. Luna (US Naval Research Laboratory), M. J. Tadjer (U.S. Naval Research Laboratory), R. L. Myers-Ward (U.S. Naval Research Laboratory, Washington DC), T. J. Anderson, K. D. Hobart, and F. J. Kub (Naval Research Laboratory)
14:50
Break
15:40
(Invited) Development of III-Nitride Bipolar Transistor Switches and Rectifiers
S. C. Shen, R. D. Dupuis, T. Detchprohm (Georgia Institute of Technology), J. H. Ryou (University of Houston), J. B. Chaiyasarikul, M. H. Ji, T. T. Kao, Y. C. Lee, Z. Lochner, and J. Kim (Georgia Institute of Technology)
16:10
(Invited) Vertical GaN Devices Enabled By Selective Area P-Type Doping
A. D. Koehler, T. J. Anderson (Naval Research Laboratory), A. Nath (George Mason University), A. G. Jacobs, M. J. Tadjer, B. Feigelson (U.S. Naval Research Laboratory), M. S. Goorsky (University of California, Los Angeles), K. D. Hobart, and F. J. Kub (Naval Research Laboratory)