GaN Technologies I

Tuesday, 3 October 2017: 13:30-15:00
Chesapeake B (Gaylord National Resort and Convention Center)
Chair:
Joan J. Carvajal
13:30
(Invited) GaN Wafers with Dramatically Improved Crystalline and Electrical Properties
J. A. Freitas Jr., J. C. Culbertson, N. A. Mahadik, M. J. Tadjer (U.S. Naval Research Laboratory), T. Sochacki, and M. Bockowski (Institute of High Pressure Physics PAS)
14:00
Effect of Wafer and Damaged Layer Thickness on Residual Stress and Bow of Free-Standing Gallium Nitride Wafers during Wafering Process
J. S. Park, J. H. Shim, K. B. Chun, J. E. Lee, T. H. Shim, and J. G. Park (Hanyang University)
14:20
Thermal Evolution of Implantation Damages in Mg-Implanted GaN Layers Grown on Si
A. Lardeau-Falcy, M. Coig, M. Charles, C. Licitra, J. Kanyandekwe, F. Milesi (Univ. Grenoble Alpes, CEA, LETI), J. Eymery (INAC MEM), and F. Mazen (Univ. Grenoble Alpes, CEA, LETI)
14:40
Evaluation of Hvpe GaN Layers Grown on Ammonothermal GaN Substrates By Synchrotron X-Ray Topography
S. Wu, B. Raghothamachar, M. Dudley (Stony Brook University), J. A. Freitas Jr. (U.S. Naval Research Laboratory), T. Sochacki, and M. Bockowski (Institute of High Pressure Physics PAS)