(Invited) Research to Manufacturing: ALD Design for Precision Atomic Layer Fabrication

Monday, 2 October 2017: 11:20
Chesapeake L (Gaylord National Resort and Convention Center)
A. R. LaVoie and P. Kumar (Lam Research Corp.)
Novel atomic layer engineering technologies have emerged as key developmental tools for <2X node fabrication in the modern semiconductor manufacturing. Today’s applications include front-end-of-line (FEOL) spacers and liners, isolation gapfill, FinFET conformal doping, multi-patterning layers, through-silicon via liners, sacrificial layers, encapsulation, selective deposition/etch, conformal etch, and surface smoothening to name a few.

In the first section, industrial drivers including intelligent devices, economics, and inflection points will be correlated to atomic layer engineering market applications. The advantageous qualities of self-limiting and saturation technologies will be reviewed with a focus on implications for throughput, unit film property optimization, and controlling process variation. An alternative paradigm shift for processing in the “sub-saturated regime” will be reviewed with attention to the pros and cons. The complementary nature of ALD and ALE will be considered with a predictive look at the future of atomic layer engineering.