ALD for Microelectronics

Monday, 2 October 2017: 11:20-13:00
Chesapeake L (Gaylord National Resort and Convention Center)
Chairs:
O. van der Straten and Stefan De Gendt
11:20
1087
(Invited) Research to Manufacturing: ALD Design for Precision Atomic Layer Fabrication
A. R. LaVoie and P. Kumar (Lam Research Corp.)
12:00
1088
ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices
V. D. Wheeler (U.S. Naval Research Laboratory), T. J. Anderson (Naval Research Laboratory), S. Ahn (University of Florida), D. I. Shahin (University of Maryland), M. J. Tadjer, A. D. Koehler, K. D. Hobart (Naval Research Laboratory), F. Ren (University of Florida), F. J. Kub (Naval Research Laboratory), A. Christou (University of Maryland), and C. R. Eddy Jr. (U.S. Naval Research Laboratory)
12:20
1089
ALD of Fluorine-Free Boron-Containing Composite Layers for Shallow Dopant Source Applications
A. U. Mane (Argonne National Laboratory), J. Liu, O. Farha (Northwestern University), S. Letourneau, K. Z. Pupek (Argonne National Laboratory), J. T. Hupp (Northwestern University), and J. W. Elam (Argonne National Laboratory)
12:40
1090
Dielectric-MoS2 Interfaces Grown By Atomic Layer Deposition
S. Letourneau (Boise State University), A. U. Mane, J. W. Elam (Argonne National Laboratory), and E. Graugnard (Boise State University)
See more of: G02: Atomic Layer Deposition Applications 13
See more of: Electronic Materials and Processing
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