High-Mobility Substrates: Ge and III-V

Monday, 2 October 2017: 11:00-12:20
Chesapeake D (Gaylord National Resort and Convention Center)
Chairs:
Akira Toriumi and Robert M Wallace
11:00
818
(Invited) Transistor Applications Using Vertical III-V Nanowires on Si Platform
K. Tomioka (GS-IST, RCIQE, Hokkaido University) and T. Fukui (Hokkaido Unversity)
11:30
819
(Invited) The Dynamics of Nickelidation for Self-Aligned Contacts to InGaAs Channels
R. Chen (UC San Diego), X. Dai (Nanyang Technological University), K. L. Jungjohann (Sandia National Laboratories), W. M. Mook (Sandia National Labs), J. Nogan (Sandia National Laboratory), C. Soci (Nanyang Technological University), and S. Dayeh (University of California, San Diego)
12:00
820
Breakdown Characteristics of TiN/HfxZr1-xO2/Al2O3/Ge Gate Stacks
P. Shao, M. N. U. Bhuyian, Y. Ding, and D. Misra (New Jersey Institute of Technology)
See more of: D01: Semiconductors, Dielectrics, and Metals for Nanoelectronics 15: In Memory of Samares Kar
See more of: Dielectric Science and Materials
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