Molybdenum disulfide (MoS₂) has become a prototypical transition metal dichalcogenide (TMDC) atomic-layered material because of its unique materials properties. For example, bulk MoS₂ exhibits an indirect band-gap of 1.3 eV, while a single monolayer has a direct band-gap of 1.8 eV. Recently, nanometer scale transistor devices have been made with MoS₂ and graphene, yet much of this work relies on layered materials prepared using chemical vapor deposition (CVD) and mechanically exfoliation. Multiple reports have demonstrated the growth of MoS₂ via CVD, but only a few studies have reported MoS₂ growth using atomic layer deposition (ALD), which offers potential advantages for high volume semiconductor manufacturing. Here, we report the ALD of few-layer MoS₂ films using MoF₆ and various sulfur precursors on various ALD-grown dielectric surfaces and the ALD of metal oxides on the ALD MoS₂ films at temperatures between 100-300 °C. In particular, we used in-situ quartz crystal microbalance measurements to investigate the nucleation of MoS₂ ALD on oxide surfaces and vice versa. In general, self-limiting growth of MoS₂ was observed on a wide range of dielectric surfaces including alumina, magnesia, and hafnia. The ALD MoS₂ films were amorphous as-deposited, but crystallized into a layered atomic structure upon annealing at 800 °C. Using in-situ spectroscopy and electrical measurements, growth inhibition of MoS₂ was seen depending on the growth substrate. These studies provide insight into the low-temperature ALD of MoS₂ and provide guidance for the ALD of additional TMDC films.