4° off-axis <0001> n-type 4H-SiC homo-epitaxial specimens with a 200 nm p-type layer at the top surface have been used for this study. The p-type resistivity of these layers varied in the range 10-2 – 101Ωcm. Ni(50nm)/Al(40nm)/Ti(20nm) were evaporated on the surface of these samples and circular TLM devices (TLM-C) were obtained by the lift-off technology. The intra pad-distances of these devices was in the range 4 – 49 μm, and the internal-pad-radius in the range 51 – 508 μm. After lift-off the specimens were alloyed at 1000°C for 2 min in vacuum. The preservation of the pads form factor and of a mirror like contact surfaces after alloying  were verified by optical inspection.
The ohmic behavior of the alloyed contact was tested by current-voltage (I-V) measurements in the temperature range 300-560 K. The specific ohmic resistance rc and transfer length LTwere obtained from the I-V resistance values of TLM devices versus intra-pads distance for constant internal-pad radius . As a cross check, the so obtained values were verified to be good for fitting the TLM resistance data obtained from the I-V measurements of devices versus variable internal-pad radius and constant intra-pads distance .
The main result of this study is that, for temperatures in the range 300-560 K, the specific contact resistance of the studied contacts is in the range 2 – 4 × 10 ‑4 Ωcm2 over three decades of p-type material resistivity, i.e. 10-2 – 101 Ωcm, that corresponds to a range of 103- 6×104 Ωsq sheet resistance values, taking into account the thickness of the p-type layer. Reasons for such a perfomance will be discussed.
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 P. Fedeli, M. Puzzanghera, F. Moscatelli, R. A. Minamisawa, G. Alfieri, U. Grossner, R. Nipoti, Mater. Sci. Forum 897, 391-394 (2017).
 R. Nipoti, M. Puzzanghera, M.C. Canino, P. Fedeli, G. Sozzi, submitted to ICSCRM2017, Washington, DC, Sept. 17-22, 2017
 D. K. Schroder, Semiconductor Material and Device Characterization, 3rd Edition, 2006, Wiley-IEEE Press.